STI Successfully developed mass-production of 6-inch SiC ingot equipment, 2021 admin 2022-03-02 |
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[Korea’s first 8-inch equipment is under development] STI Successfully developed mass-production of 6-inch SiC ingot equipment, 2021
for mass production in two
years based on 30 years of experience in equipment design and simulation
technology, high temperature & high pressure control technology.
Through this opportunity, STI took one step closer to the localization of SiC wafers, which had been entirely imported so far, it laid the foundation for entering the
global SiC market. It is expected that Korea will have a competitive advantage
in the power semiconductor market.
The newly developed grower is a device that grows SiC ingots based on the Physical Vapor Transport (PVT) method. In particular, it is meant that it succeeded in
localizing all necessary process parts from seeding devices to growth
processes. STI realized the importance of SiC materials in the development process of ingot growth. STI is also challenging to develop SiC powder synthesis using high-purity silicon dioxide (SiO2), a by-product generated when manufacturing calcium fluoride (CaF2) optical material manufacturing equipment for semiconductor defects. Currently, focusing on developing technologies to cope with markets for small
amounts of multivarious power semiconductors.
STI aims to
secure a level of technology that is capable of producing SiC wafers by
developing Korea's first 8-inch ingot grower as soon as possible.
Reference Etnews
https://www.etnews.com/20211020000095 |
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