(a) Particle shpe, (b) Particle size, (c) X-Ray Diffractometry, (d) Glow Discharge Mass Spectrometry result
<Characteristics of SiC Powder Synthetic Temperature Conditions - STI>
STI has localized silicon carbide (SiC) ingot powder, a key semiconductor material.
SiC powder is used for production of semiconductor wafer ingots. Korea has thus far relied on imports 100 percent.
The SiC ingot powder developed by the Korean company has a purity of 99.9998 percent.
STI has developed a physical vapor transport (PVT) reactor, the equipment for manufacturing SiC semiconductor ingots,
on its own and mobilized about 20 researchers and invested 10 billion won to develop the SiC ingot powder.
The localization of SiC ingot powder is expected to create an import substitution effect of 200 billion won to 300 billion won.
According to Japan’s Fuji Economic Research Institute, the global SiC powder market is expected to grow from 2 trillion won in 2022 to 2.95 trillion won in 2024.
Denso, Pacific, Sumitomo Chemical and Showa Denko of Japan occupy nearly half of the first-class SiC power market.
STI CEO Seo Tae-il said, “Our ingot powder has a purity of 99.9998 percent, which outweighs the 99.8 percent purity of the product that we have imported from Japan.”
reference: businesskorea